NCE1505S Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Low Gate to Drain Charge to Reduce Switching Losses Schematic diagram Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Marking and pin Assignment 100% ΔVds TESTED! SOP-8 top...