Datasheet Details
| Part number | NCE1505S |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 336.91 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE1505S Datasheet
|
|
|
General Description
The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ）.
- High density cell design for ultra low Rdson.
- Fully characterized Avalanche voltage and current.
- Low Gate to Drain Charge to Reduce Switching Losses Schematic diagram.