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NCE Power Semiconductor

NCE15G120P Datasheet Preview

NCE15G120P Datasheet

Trench NPT IGBT

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http://www.ncepower.com
NCE15G120P
1200V, 15A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: VCE(sat)=2.0V@IC=15A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE15G120P
C
G
E
Symbol Description
VCES
VGES
IC
ICM(1)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
@TC=25°C
@TC=100°C
Maximum Power Dissipation @TC=25°C
Maximum Power Dissipation @TC=100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-30
30
15
45
220
88
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE15G120P Datasheet Preview

NCE15G120P Datasheet

Trench NPT IGBT

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Pb Free Product
http://www.ncepower.com
Thermal Characteristics
Symbol
R JC
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
ICES Collector Cut-Off Current
IGES G-E Leakage Current
On Characteristics
VGE(th) G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation
Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres
Reverse Transfer
Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Test Conditions
VGE=0V, Ic=1mA
VCE=VCES, VGE=0V
VGE=VGES, VCE=0V
IC=15mA, VCE=VGE
IC=15A, VGE=15V
TC=25°C
IC=15A, VGE=15V
TC=125°C
VCE=30V, VGE=0V,
f=1MHz
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
VCC=600V,IC=15A,
VGE=15V
NCE15G120P
Typ.
-
-
Max.
0.57
40
Units
°C/W
°C/W
Min. Typ. Max. Units
1200 - - V
--
1 mA
- - +/-250 nA
4.0 5.5
-2
7.0
2.5
V
V
- 2.15
-
V
- 2350
- 70
- 45
-
-
-
pF
pF
pF
- 33
-
ns
- 80
-
ns
- 160
-
ns
- 255 330
ns
- 0.3
-
mJ
- 0.58 0.74 mJ
- 0.88
-
mJ
- 30
-
ns
- 115
-
ns
- 170
-
ns
- 390
-
ns
- 0.38
-
mJ
- 0.89
-
mJ
- 1.27
-
mJ
- 100
-
nC
- 19
-
nC
- 45
-
nC
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE15G120P
Description Trench NPT IGBT
Maker NCE Power Semiconductor
Total Page 7 Pages
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