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NCE2025S - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE2025S
Manufacturer	NCE Power Semiconductor
File Size	395.27 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2025S-NCEPowerSemiconductor.pdf

NCE2025S Product details

Description

The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

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Published: May 15, 2016 |