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NCE2025I - N-Channel MOSFET

Key Features

  • Halogen-free.
  • TrenchFET® Gen III Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Datasheet Details

Part number NCE2025I
Manufacturer VBsemi
File Size 340.58 KB
Description N-Channel MOSFET
Datasheet download datasheet NCE2025I Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE2025I-VB NCE2025I-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) （mΩ） 7 at VGS = 10 V 30 9 at VGS= 4.5 V ID (A) 50 45 Qg (Typ.) 19 nC TO-251 D FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Conversion - System Power RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.