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NCE2025I - N-Channel Enhancement Mode Power MOSFET

Description

The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =25A RDS(ON).

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Datasheet Details

Part number NCE2025I
Manufacturer NCE Power Semiconductor
File Size 339.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2025I Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2025I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.
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