NCE2025S - N-Channel Enhancement Mode Power MOSFET

Description

The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE2025S
Manufacturer	NCE Power Semiconductor
File Size	395.27 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2025S Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2025S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ●VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.

Published: May 15, 2016 |