NCE2025S
Description
The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Part: NCE2025S
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: NCE Power Semiconductor
- Size: 395.27 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| NCE2025S | VBsemi | N-Channel MOSFET |