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NCE2302C - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 3 A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 50mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NCE2302C
Manufacturer NCE Power Semiconductor
File Size 242.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2302C Datasheet

Full PDF Text Transcription for NCE2302C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE2302C. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE2302C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent...

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tion The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 3 A RDS(ON) < 80mΩ @ VGS=2.5V RDS(ON) < 50mΩ @ VGS=4.