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NCE2305A - NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – NCE2305A

Datasheet Details

Part number NCE2305A
Manufacturer NCE Power Semiconductor
File Size 318.19 KB
Description NCE P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2305A Datasheet
Additional preview pages of the NCE2305A datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2305A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
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