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NCE2321 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -3.9A RDS(ON).

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Datasheet Details

Part number NCE2321
Manufacturer NCE Power Semiconductor
File Size 250.44 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2321 Datasheet

Full PDF Text Transcription for NCE2321 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE2321. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE2321 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2321 uses advanced trench technology to provide excellent R...

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ion The NCE2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.