NCE25G120T Datasheet Trench NPT IGBT

Manufacturer: NCE Power Semiconductor

NCE25G120T trench npt igbt by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE25G120T
Manufacturer	NCE Power Semiconductor
File Size	309.53 KB
Description	Trench NPT IGBT
Datasheet	NCE25G120T Datasheet

General Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

This device is designed for soft switching applications.

Absolute Maximum Ratings Pb Free Product NCE25G120T C G E Symbol Description VCES VGES IC ICM(1) PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current @TC=25°C @TC=100°C Maximum Power Dissipation @TC=25°C Maximum Power Dissipation @TC=100°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Overview

http://www.ncepower.com NCE25G120T 1200V, 25A, Trench NPT IGBT.

Key Features

z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z High input impedance.

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