NCE2003 Description
The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
NCE2003 Key Features
- N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V
- P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package