NCE2003 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features - N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V - P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V - High power and current handing capability - Lead free product is acquired - Surface mount package N-channel P-channel Marking and pin Assignment Package Marking and Ordering...