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NCE2003 Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Overview: http://.ncepower. Pb Free Product NCE2003 N and P-Channel Enhancement Mode Power.

Datasheet Details

Part number NCE2003
Manufacturer NCE Power Semiconductor
File Size 357.32 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet NCE2003-NCEPowerSemiconductor.pdf

General Description

The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V.
  • P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Marking and pin Assignment Package Marking and Ordering Information SOT-23-6L top view Device Marking Device Device Package Reel Size Tape width NCE2003 NCE2003 SOT-23-6L Ø180mm.

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