Datasheet Details
| Part number | NCE2010E |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 351.76 KB |
| Description | NCE N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE2010E Datasheet
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General Description
The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
Key Features
- VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Schematic diagram Marking and pin assignment.