NCE2011E
NCE2011E is manufactured by NCE Power Semiconductor.
http://.ncepower.
Pb Free Product
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
General Features
- VDS = 20V,ID =11A RDS(ON) < 7Ω @ VGS=2.5V RDS(ON) < 9Ω @ VGS=4.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Schematic diagram Marking and pin assignment
Application
- PWM application
- Load switch
TSSOP-8 top view
Package Marking and Ordering...