NCE2012 - NCE N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

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NCE2012 nce n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE2012
Manufacturer	NCE Power Semiconductor
File Size	358.47 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2012 Datasheet

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http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.