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NCE2012 - NCE N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE2012 NCE N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE2012

Datasheet Details

Part number	NCE2012
Manufacturer	NCE Power Semiconductor
File Size	358.47 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2012 Datasheet
Additional preview pages of the NCE2012 datasheet.

Product details

Description

The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

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Published: May 22, 2015 |