NCE2006NE Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Overview: http://.ncepower. Pb Free Product NCE2006NE NCE N-Channel Enhancement Mode Power.

Datasheet Details

Part number	NCE2006NE
Manufacturer	NCE Power Semiconductor
File Size	349.30 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2006NE-NCEPowerSemiconductor.pdf

The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram.

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