Datasheet Details
| Part number | NCE2007N |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 316.42 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE2007N Datasheet
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General Description
The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram.