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NCE2008E Datasheet Nce N-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Overview: http://.ncepower. Pb Free Product NCE2008E NCE N-Channel Enhancement Mode Power.

Datasheet Details

Part number NCE2008E
Manufacturer NCE Power Semiconductor
File Size 319.41 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE2008E-NCEPowerSemiconductor.pdf

General Description

The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

Key Features

  • VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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