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NCE25GD120T Datasheet Trench NPT IGBT

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE25GD120T
Manufacturer NCE Power Semiconductor
File Size 313.70 KB
Description Trench NPT IGBT
Download NCE25GD120T Download (PDF)

General Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

This device is designed for soft switching applications.

Absolute Maximum Ratings Pb Free Product NCE25GD120T Symbol Description VCES VGES IC ICM(1) IF IFM PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current @TC=25°C Continuous Collector Current @TC=100°C Pulsed Collector Current Diode Continuous Forward Current @TC=100°C Diode Maximum Forward Current Maximum Power Dissipation @TC=25°C Maximum Power Dissipation @TC=100°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Overview

http://www.ncepower.com NCE25GD120T 1200V, 25A, Trench NPT IGBT.

Key Features

  • z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z High input impedance.

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