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NCE3401AY - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -4.4A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin Assignment.

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Datasheet Details

Part number NCE3401AY
Manufacturer NCE Power Semiconductor
File Size 249.31 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3401AY Datasheet

Full PDF Text Transcription for NCE3401AY (Reference)

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http://www.ncepower.com Pb Free Product NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401AY uses advanced trench technology to provide excelle...

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ption The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.4A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.