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NCE3401Y - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE3401Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number NCE3401Y
Manufacturer NCE Power Semiconductor
File Size 246.68 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3401Y Datasheet

Full PDF Text Transcription for NCE3401Y (Reference)

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http://www.ncepower.com Pb Free Product NCE3401Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401Y uses advanced trench technology to provide excellent...

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tion The NCE3401Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.

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