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NCE Power Semiconductor

NCE55P30K Datasheet Preview

NCE55P30K Datasheet

P-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE55P30K
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE55P30K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =-55V,ID =-30A
RDS(ON) <40m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE55P30K
NCE55P30K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-55
±20
-30
-21
110
65
0.43
420
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.3 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1




NCE Power Semiconductor

NCE55P30K Datasheet Preview

NCE55P30K Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE55P30K
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-55V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-15A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=-25V,ID=-16A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=-30V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-30V,ID=-15A
VGS=-10V,RGEN=3
VDS=-30V,ID=-15A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=-15A
IS
trr TJ = 25°C, IF = -15A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max Unit
-55 -
--
--
-
1
±100
V
μA
nA
-2 -2.6
- 30
8-
-4
40
-
V
m
S
- 3500
- 240
- 153
-
-
-
PF
PF
PF
- 12
- 15
- 38
- 15
- 56
- 11
- 24
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
V
- - -30
A
- - 71 nS
- - 170 nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=-25V,VG=-20V,L=0.5mH,Rg=25,IAS=29A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.1


Part Number NCE55P30K
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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