Datasheet4U Logo Datasheet4U.com

NCE55P30 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-55V,ID =-30A RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number NCE55P30
Manufacturer NCE Power
File Size 288.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE55P30 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
http://www.ncepower.com Pb Free Product NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.