Datasheet Details
| Part number | NCE60H10A |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 346.35 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE60H10A Datasheet
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General Description
The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Key Features
- VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Special designed for convertors and power controls.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability Schematic diagram Marking and pin assignment.
