NCE60H10A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V
(Typ:4.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.
General Features
* VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V
(Typ:4.8mΩ)
* High density cell design for u.
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