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NCE Power Semiconductor

NCE65T180F Datasheet Preview

NCE65T180F Datasheet

N-Channel Super Junction Power MOSFET

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NCE65T180D,NCE65T180,NCE65T180F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON) MAX
ID
650
180
21
V
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T180
TO-220
NCE65T180
NCE65T180F
TO-220F
NCE65T180F
NCE65T180D
TO-263
NCE65T180
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V), AC (f>1 Hz)
Continuous Drain Current at TC=25°C
Continuous Drain Current at TC=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(TC=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by TJmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
TO-263 TO-220 TO-220F
NCE65T180
NCE65T180F
NCE65T180D
650
±30
21 21*
13.2 13.2*
84 84*
188 33.8
1.5 0.27
441
10.5
Unit
V
V
A
A
A
W
W/°C
mJ
A
0.7 mJ
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
1.0




NCE Power Semiconductor

NCE65T180F Datasheet Preview

NCE65T180F Datasheet

N-Channel Super Junction Power MOSFET

No Preview Available !

NCE65T180D,NCE65T180,NCE65T180F
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
dv/dt
dv/dt
TJ,TSTG
Symbol
RthJC
RthJA
NCE65T180
NCE65T180F
NCE65T180D
50
15
-55...+150
Unit
V/ns
V/ns
°C
NCE65T180
NCE65T180D
0.66
62.5
NCE65T180F
3.69
80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10.5A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID = 10.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=21A,
Qgs
VGS=10V
Qgd
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=11A,
RG=4Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=21A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=21A,di/dt=100A/μs
Peak Reverse Recovery Current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Min
650
3
Typ
0.05
3.5
150
16
2250
83
1.6
36
14
8.5
11
6
61
4.5
0.9
310
5
28
Max
1
100
±100
4
180
21
84
1.3
Unit
V
μA
μA
nA
V
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Co., Ltd
Page 2
http://www.ncepower.com
1.0


Part Number NCE65T180F
Description N-Channel Super Junction Power MOSFET
Maker NCE Power Semiconductor
Total Page 10 Pages
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