NCE65T180F Datasheet | NCE Power Semiconductor

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features - New technology for high voltage device - Low on-resistance and low conduction losses - Small package - Ultra Low Gate Charge cause lower driving requirements - 100% Avalanche Tested - ROHS pliant VDS RDS(ON) MAX ID 650 180 21 V mΩ A Application - Power factor correction（PFC） - Switched mode power supplies(SMPS) - Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE65T180 TO-220 NCE65T180 TO-220F NCE65T180D TO-263 NCE65T180...