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NCE70T360D - N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Key Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)TYP ID 700 330 11.5 V mΩ A.

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Datasheet Details

Part number NCE70T360D
Manufacturer NCE Power Semiconductor
File Size 604.64 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet NCE70T360D Datasheet

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NCE70T360 N-Channel Super Junction Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE70T360D,NCE70T360,NCE70T360F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant VDS RDS(ON)TYP ID 700 330 11.