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NCE80H11H - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE80H11H
Manufacturer	NCE Power Semiconductor
File Size	323.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE80H11H-NCEPowerSemiconductor.pdf

NCE80H11H Product details

Description

The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Jun 2, 2018 |