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NCE80H11H - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number NCE80H11H
Manufacturer NCE Power Semiconductor
File Size 323.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE80H11H Datasheet

Full PDF Text Transcription for NCE80H11H (Reference)

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http://www.ncepower.com Pb Free Product NCE80H11H NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H11H uses advanced trench technology and design to prov...

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ption The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.

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