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NCE80H16 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =80V,ID =160A RDS(ON).

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Datasheet Details

Part number NCE80H16
Manufacturer NCE Power Semiconductor
File Size 313.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE80H16 Datasheet

Full PDF Text Transcription for NCE80H16 (Reference)

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http://www.ncepower.com Pb Free Product NCE80H16 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16 uses advanced trench technology and design to provid...

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tion The NCE80H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =160A RDS(ON) <4.