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NCE Power Semiconductor

NCE80H16WD Datasheet Preview

NCE80H16WD Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE80H16WD
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE80H16WD uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =80V,ID =160A
RDS(ON) <4.5m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
TO-263T-2L top view
100% UIS TESTED!
100% Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE80H16WD NCE80H16WD
TO-263T-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
80
±20
160
113
500
285
1.9
1936
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristics
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.53 /W
Wuxi NCE Power Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE80H16WD Datasheet Preview

NCE80H16WD Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=80V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=40V,RL=15
VGS=10V,RG=2.5
VDS=40V,ID=20A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
IS
trr TJ = 25°C, IF = 20A
Qrr di/dt = 500A/μs(Note3)
Pb Free Product
NCE80H16WD
Min Typ Max Unit
80 88
-
--
1
- - ±100
V
μA
nA
23
- 3.5
60 -
4
4.5
-
V
m
S
- 6500
- 810
- 310
-
-
-
PF
PF
PF
- 31.5
- 33
- 46
- 17.5
- 130
- 36
- 46
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 160
- 51
-
- 61
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
v1.0


Part Number NCE80H16WD
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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