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NCE8205A - N-Channel Enhancement Mode Power MOSFET

Description

The NCE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number NCE8205A
Manufacturer NCE Power Semiconductor
File Size 372.10 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8205A Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE8205A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.
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