NCE8205B Datasheet PDF (NCE N-Channel Enhancement Mode Power MOSFET) | Download NCE Power Semiconductor NCE8205B

NCE8205B - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V,ID = 6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

Datasheet Details

Part number	NCE8205B
Manufacturer	NCE Power Semiconductor
File Size	335.23 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8205B Datasheet
Additional preview pages of the NCE8205B datasheet.

📁 Similar Datasheet

NCE8205 - N-Channel MOSFETS (JCST)

NCE8098 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE80H11 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE80H11D - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE80H12 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE8580 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H15 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H15T - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H21 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H21T - N-Channel Enhancement Mode Power MOSFET (NCE Power)

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.

Published: May 22, 2015 |