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NCE8205E - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number NCE8205E
Manufacturer NCE Power Semiconductor
File Size 360.82 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8205E Datasheet

Full PDF Text Transcription for NCE8205E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE8205E. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE8205E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205E uses advanced trench technology to provide excellent...

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tion The NCE8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.

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