n-channel enhancement mode power mosfet.
* VDS = 20V,ID = 6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surf.
The NCE8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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