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NCE8295A - N-Channel Enhancement Mode Power MOSFET

Description

The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

  • VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.6mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Special designed for convertors and power controls.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number NCE8295A
Manufacturer NCE Power Semiconductor
File Size 353.36 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8295A Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE8295A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.
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