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NCE8290B - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE8290B N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE8290B

Datasheet Details

Part number	NCE8290B
Manufacturer	NCE Power Semiconductor
File Size	354.26 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8290B Datasheet
Additional preview pages of the NCE8290B datasheet.

Product details

Description

The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V (Typ:7.5mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Special designed for convertors and power controls.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |