NCE82H110 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson.
General Features
* VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.9mΩ)
* Special process technology for h.
The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.9mΩ)
* Speci.
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