NCEP0112AS Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP0112AS Features

* VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and p

NCEP0112AS General Description

The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP0112AS Datasheet (427.87 KB)

NCEP0112AS Datasheet Preview — Preview of NCEP0112AS PDF

Datasheet Details

Part number:

NCEP0112AS

Manufacturer:

NCE Power Semiconductor

File Size:

427.87 KB

Description:

N-channel super trench power mosfet.

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NCEP0112AS N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEP0112AS Features

NCEP0112AS General Description

Datasheet Details

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Description:

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