NCEP0178AF Datasheet PDF - NCE Power Semiconductor N-Channel Super Trench Power MOSFET Specs

NCEP0178AF - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram.

Datasheet Details

Part number	NCEP0178AF
Manufacturer	NCE Power Semiconductor
File Size	360.49 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0178AF Datasheet
Additional preview pages of the NCEP0178AF datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP0178AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.

Published: Jun 3, 2018 |