2SB1116
FEATURES
- Low VCE(sat)
VCE(sat) =
- 0.20 V TYP. (IC =
- 1.0 A, IB =
- 50 m A)
- High PT in small dimension with general-purpose
PT = 0.75 W, VCEO =
- 50/- 60 V, IC(DC) =
- 1.0 A
- plementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC(DC) IC(pulse)- PT
Tj Tstg
Ratings 2SB1116 2SB1116A
- 60
- 80
- 50
- 60
- 6.0
- 1.0
- 2.0 0.75 150
- 55 to +150
- PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Unit
V V V A A W °C °C
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage temperature Fall time
ICBO IEBO h FE1
- - h FE2
- - VBE
- - VCE(sat)
- -...
