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2SB1116A - PNP SILICON TRANSISTORS

Download the 2SB1116A datasheet PDF. This datasheet also covers the 2SB1116 variant, as both devices belong to the same pnp silicon transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Low VCE(sat) VCE(sat) =.
  • 0.20 V TYP. (IC =.
  • 1.0 A, IB =.
  • 50 mA).
  • High PT in small dimension with general-purpose PT = 0.75 W, VCEO =.
  • 50/.
  • 60 V, IC(DC) =.
  • 1.0 A.
  • Complementary transistor with 2SD1616 and 1616A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1116_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1116A PNP EPITAXIAL SILICON TRANSISTOR UTC
2SB1116A PNP General Purpose Transistor Weitron
2SB1116A PNP Plastic Encapsulated Transistor SeCoS
2SB1116A Transistor USHA
2SB1116A PNP Transistor JCST

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SB1116 PNP SILICON TRANSISTORS
2SB1114 PNP Transistor
2SB1115 PNP Transistor
2SB1115A PNP Transistor
2SB1117 PNP Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.