2SB1116A Datasheet PDF

FEATURES

● High Collector Power Dissipation .
● Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 2SB1116 2SB1116A Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Base -emitter voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time CLASSIFICATION OF hFE(1) Rank L V(BR)CEO V(B...