| Part Number | 2SB1116A Datasheet |
|---|---|
| Manufacturer | Weitron |
| Overview | 2SB1116/2SB1116A PNP General Purpose Transistor P b Lead(Pb)-Free 3 BASE COLLECTOR 2 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collecto. CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min . |
2SB1116A Datasheet and Specifications PDF
The 2SB1116A is a PNP General Purpose Transistor.
Key Specifications
| Part Number | 2SB1116A Datasheet |
|---|---|
| Description | PNP Plastic Encapsulated Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview | 2SB1116A Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES High Collector Power Dissipation Com. High Collector Power Dissipation Complementary to 2SD1616A G H TO-92 CLASSIFICATION OF hFE(1) Product-Rank Range 2SB1116A-L 135~270 2SB1116A-K 200~400 2SB1116A-U 300~600 K A 1Emitter 2Collector 3Base J D REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1. |
| Part Number | 2SB1116A Datasheet |
|---|---|
| Description | PNP SILICON TRANSISTORS |
| Manufacturer | NEC |
| Overview |
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* Low VCE(sat) VCE(sat) = *0.20 V TYP. (IC = *1.0 A, IB = *50 mA) * High PT in small dimension with general-purpose PT = 0.75 W, VCEO = *50/ *60 V, IC(DC) = *1.0 A * Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to. |
| Part Number | 2SB1116A Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCST |
| Overview |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD161.
* High Collector Power Dissipation . * Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -5. |