Weitron 2SB1116
PNP General Purpose Transistor
| Part No. | 2SB1116 |
|---|---|
| Datasheet | 2SB1116 Download |
| Manufacturer |  Weitron |
| Description | PNP General Purpose Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -60 -50 -6.0 1000 1116A -80 -60 -6.0 Unit V V V mA THERMAL CHARACTERISTICS Charact er ist ics Total Device Dissipation Alumina Substrate,TA=25°C Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 750 Unit mW °C °C +150 -55 to +150ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (lC=-100μA, lE=0) Collector-Emitter Breakdown Voltage (lC=-1mA, lB=0) Emitter-Base Breakdown Voltage (lE=-100μA, lC=0) 1116 1116A 1116 1116A 1116 1116A V(BR)CBO V(BR)CEO V(BR)EBO -60 -80 -50 -60 -6.0 V V V WEITRON 1/4 22-Jan-09 Free Datasheet 2SB1116/2SB1116AELECTRICAL CHARACTERISTICS
(TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.
