SeCoS Halbleitertechnologie GmbH 2SB1116
PNP Plastic Encapsulated Transistor
| Part No. | 2SB1116 |
|---|---|
| Datasheet | 2SB1116 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Plastic Encapsulated Transistor |
| Buy | Stock & Price |
FEATURES
High Collector Power Dissipation Complementary to 2SD1616 CLASSIFICATION OF hFE(1) Product-Rank 2SB1116-L 2SB1116-K Range 135~270 200~400 2SB1116-U 300~600 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -60 -50 -6 -1 0.75 150, -55~150 3 Base Collector 2 1 Emitter Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC...