NEC 2SB1116
the 2SB1116A.) Marking hFE1 L 135 to 270 K 200 to 400 U 300 to 600 2SB1116, 1116A 2 Data Sheet D16195EJ1V0DS TYPICAL CHARACTERISTICS (Ta = 25°C) 2SB1116, 1116A Data Sheet D16195EJ1V0DS 3 2SB1116, 1116A 4 Data Sheet D16195EJ1V0DS [MEMO] 2SB1116, 1116A Data Sheet D16195EJ1V0DS 5 2SB1116, 1116A • The information in this document is current as of July, 2001. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products.| Part No. | 2SB1116 |
|---|---|
| Datasheet | 2SB1116 Download |
| Manufacturer |  NEC |
| Description | PNP SILICON TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA)● High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A
● Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.75 150 −55 to +150 * PW ≤ 10 ms, duty cycle ≤ 50%ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Unit V V V A A W °C °C Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Turn-on time Storage temperature Fall time ICBO IEBO hFE1 ** hFE2 ** VBE ** VCE(sat) ** VBE(sat) *...
