2SB1116 Overview
Key Features
- Low VCE(sat) VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA)
- High PT in small dimension with general-purpose PT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A
- Complementary transistor with 2SD1616 and 1616A
| Part | 2SB1116 |
|---|---|
| Description | PNP SILICON TRANSISTORS |
| Category | Transistor |
| Manufacturer | NEC |
| Size | 100.93 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB1116 | JCST | PNP Transistor |
| 2SB1116 | Unisonic Technologies | PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB1116 | Weitron | PNP General Purpose Transistor |
| 2SB1116A | Weitron | PNP General Purpose Transistor |
| 2SB1116A | SeCoS Halbleitertechnologie GmbH | PNP Plastic Encapsulated Transistor |