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2SB1116 - PNP SILICON TRANSISTORS

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Low VCE(sat) VCE(sat) =.
  • 0.20 V TYP. (IC =.
  • 1.0 A, IB =.
  • 50 mA).
  • High PT in small dimension with general-purpose PT = 0.75 W, VCEO =.
  • 50/.
  • 60 V, IC(DC) =.
  • 1.0 A.
  • Complementary transistor with 2SD1616 and 1616A.

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Part Number Description
2SB1116A PNP SILICON TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.