| Part Number | 2SB1116 Datasheet |
|---|---|
| Manufacturer | JCST |
| Overview |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD161.
* High Collector Power Dissipation . * Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -5. |
2SB1116 Datasheet and Specifications PDF
The 2SB1116 is a PNP Transistor.
Key Specifications
| Package | TO-92 |
|---|
| Part Number | 2SB1116 Datasheet |
|---|---|
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
Complement to UTC 2SD1616/A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
2SB1116L-x-AB3-B
2SB1116G-x-AB3-B
SOT-89
2SB1116L-x-T92-B
2SB1116G-x-T92-B
TO-92
2SB1116L-.
ES CO., LTD
2 of 5
QW-R201-066.G
2SB1116/A
PNP SILICON TRANSISTOR
* ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage 2SB1116 2SB1116A VCBO -60 -80 V Collector to Emitter Voltage 2SB1116 2SB1116A . |
| Part Number | 2SB1116 Datasheet |
|---|---|
| Description | PNP SILICON TRANSISTORS |
| Manufacturer | NEC |
| Overview |
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* Low VCE(sat) VCE(sat) = *0.20 V TYP. (IC = *1.0 A, IB = *50 mA) * High PT in small dimension with general-purpose PT = 0.75 W, VCEO = *50/ *60 V, IC(DC) = *1.0 A * Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to. |
| Part Number | 2SB1116 Datasheet |
|---|---|
| Description | PNP General Purpose Transistor |
| Manufacturer | Weitron |
| Overview | 2SB1116/2SB1116A PNP General Purpose Transistor P b Lead(Pb)-Free 3 BASE COLLECTOR 2 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collecto. CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min . |