B1116 Overview
Key Features
- Low VCE(sat) VCE(sat) = -0.20 V TYP. (IC = -1.0 A, IB = -50 mA)
- High PT in small dimension with general-purpose PT = 0.75 W, VCEO = -50/-60 V, IC(DC) = -1.0 A
- Complementary transistor with 2SD1616 and 1616A
| Part | B1116 |
|---|---|
| Description | 2SB1116 |
| Manufacturer | NEC |
| Size | 100.93 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| B1116 | JCST | PNP Transistor |
| B1116A | JCST | PNP Transistor |
| B1115 | Renesas | PNP SILICON EPITAXIAL TRANSISTOR |
| B1117 | Bay Linear | Low Dropout Voltage Regulator |
| B1110 | LITEON | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |