| Part Number | B1116 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* Low VCE(sat) VCE(sat) = *0.20 V TYP. (IC = *1.0 A, IB = *50 mA) * High PT in small dimension with general-purpose PT = 0.75 W, VCEO = *50/ *60 V, IC(DC) = *1.0 A * Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to. |
B1116 Datasheet and Specifications PDF
The B1116 is a 2SB1116.
Key Specifications
| Height | 26 mm |
|---|---|
| Length | 48 mm |
| Width | 45 mm |
| Max Operating Temp | 100 °C |
| Min Operating Temp | -25 °C |
| Part Number | B1116 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCST |
| Overview |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD161.
* High Collector Power Dissipation . * Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -5. |