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  NEC Electronic Components Datasheet  

2SC4331 Datasheet

Silicon Power Transistor

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4331,4331-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4331 and 2SC4331-Z are mold power transistors developed for
www.DataSheeht4igUh.c-sopmeed switching and features a very low collector-to-emitter saturation
voltage.
This transistor is ideal for use in switching regulators, DC/DC converters,
motor drivers, solenoid drivers, and other low-voltage power supply devices,
as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead-processed product and is deal for mounting a hybrid IC.
• Low collector saturation voltage
VCE(sat) = 0.3 V MAX. (IC = 3.0 A)
• Fast switching speed:
tf 0.4 μs MAX. (IC = 3.0 A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) Note 1
Base Current (DC)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT1
PT2
Tj
Tstg
150
100
7.0
5.0
10
2.5
15
1.0 Note 2, 2.0 Note 3
150
55 to +150
V
V
V
A
A
A
W
W
°C
°C
Notes 1. PW 10 ms, duty cycle 50%
2. Printing board mounted
3. 7.5 cm2 × 0.7 mm, ceramic board mounted
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4
123
1.1 ±0.2
2.3 ±0.2
0.5 ±0.1
2.3 2.3
0.5
+0.2
0.1
0.5
+0.2
0.1
<R>
TO-251 (MP-3)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
Note
2.3 ±0.2
0.5 ±0.1
Note
123
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 (MP-3Z)
Electrode Connectio
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16136EJ3V0DS00 (3rd edition)
Date Published January 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2002


  NEC Electronic Components Datasheet  

2SC4331 Datasheet

Silicon Power Transistor

No Preview Available !

2SC4331,4331-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
VCEO(SUS) IC = 2.5 A, IB = 0.25 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS)
IC = 2.5 A, IB1 = IB2 = 0.25 A,
VBE(OFF) = 1.5 V, L = 180 μH, clamped
Collector cutoff current
ICBO VCE = 100 V, IE = 0
Collector cutoff current
ICER VCE = 100 V, RBE = 50 Ω, TA = 125°C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = 1.5 V
Collector cutoff current
www.DataSheet4U.com
ICEX2
VCE = 100 V, VBE(OFF) = 1.5 V,
TA = 125°C
Emitter cutoff current
DC current gain Note
DC current gain Note
DC current gain Note
Collector saturation voltage Note
Collector saturation voltage Note
Base saturation voltage Note
Base saturation voltage Note
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IE = 0.5 A
Turn-on time
Storage time
Fall time
ton IC = 3.0 A, RL = 17 Ω,
tstg
IB1 = IB2 = 0.15 A, VCC 50 V
Refer to the test circuit.
tf
Note Pulse test PW 350 μs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
MIN.
100
100
100
100
60
TYP.
200
60
150
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.4
Unit
V
V
μA
mA
μA
mA
μA
V
V
V
V
pF
MHz
μs
μs
μs
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2 Data Sheet D16136EJ3V0DS


Part Number 2SC4331
Description Silicon Power Transistor
Maker NEC
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2SC4331 Datasheet PDF





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