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2SD1481 - SILICON POWER TRANSISTOR

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • On-chip C-to-B Zener diode for surge voltage absorption.
  • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A).
  • Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid relay printer head drivers.

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Datasheet Details

Part number 2SD1481
Manufacturer NEC
File Size 135.41 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SD1481 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX.
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