2SD2165 Key Features
- High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
- Mold package that does not require an insulating board or insulation bushing
- Part: 2SD2165
- Description: NPN SILICON EPITAXIAL TRANSISTOR
- Manufacturer: NEC
- Size: 154.54 KB
Other 2SD2165 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SD2165 | Silicon NPN Power Transistor |