Datasheet Details
| Part number | 2SD2165 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2165-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2165 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2165-InchangeSemiconductor.pdf |
|
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·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use low frequency amplifilier and low switching speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2165 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2165 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2165 | NPN SILICON EPITAXIAL TRANSISTOR | NEC |
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