2SD2165 datasheet by Inchange Semiconductor.
| Part number | 2SD2165 |
|---|---|
| Datasheet | 2SD2165-InchangeSemiconductor.pdf |
| File Size | 200.23 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use low frequency amplifilier and low switching speed applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2165 Tj=25℃ unless otherwise...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2165 | NPN SILICON EPITAXIAL TRANSISTOR | NEC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2161 | Silicon NPN Power Transistor |
| 2SD2102 | Silicon NPN Power Transistor |
| 2SD2110 | Power Transistor |
| 2SD2112 | Power Transistor |
| 2SD2113 | Power Transistor |
| 2SD2118 | Silicon NPN Power Transistor |
| 2SD2128 | Power Transistor |
| 2SD2140 | Power Transistor |
| 2SD218 | Silicon NPN Power Transistor |
| 2SD2027 | Power Transistor |
